论文部分内容阅读
采用直流反应磁控溅射工艺,在不同的沉积时间条件下(5～100min)制备了以单晶硅为衬底的氧化钒薄膜,用扫描电镜分析了薄膜结构的断面形貌。对氧化钒薄膜建立了椭偏色散模型[1],运用经典振子模型在椭偏仪上拟合并计算薄膜的透射光谱得到理想的拟合效果,发现在300～450nm内其折射率随波长的增加而增大,而在450～700nm内逐渐减小,632.8nm波长下磁控溅射制备的氧化钒薄膜折射率在2.2～2.5。初始沉积薄膜折射率较大,而随着沉积时间的增加,不同厚度的薄膜折射率从2.43到2.24呈现略微减小的趋势。用拟合得到的厚度值来计算出沉积速率,发现沉积速率也逐渐变小。
DC reactive magnetron sputtering was used to fabricate vanadium oxide films with single crystal silicon under different deposition time (5 ~ 100min). The morphology of the films was analyzed by SEM. An ellipsometric dispersion model was established for vanadium oxide film [1]. The ideal fitting effect was obtained by fitting and calculating the transmission spectrum of the film by using the classical oscillator model on the ellipsometer. It was found that the refractive index of the vanadium oxide film varies with the wavelength And increases gradually, but decreases gradually in 450-700 nm. The refractive index of vanadium oxide film prepared by magnetron sputtering at wavelength of 632.8 nm is 2.2-2.5. The refractive index of the initial deposited film is larger, and as the deposition time increases, the refractive index of the films with different thickness shows a slight decrease from 2.43 to 2.24. Using the fitted thickness values to calculate the deposition rate, the deposition rate was found to decrease gradually.