单晶Si衬底上沉积一层非晶绝缘的SiO_2膜,再在SiO_2膜上沉积一多晶硅层,经区熔再结晶处理后,形成单晶硅膜。这种结构的材料称为SOI(Silicon on Insulator)·SOI材料用于集成电路时具有许多优点,它速度高、集成度高、抗辐照和抗Latch-up效应,也可以用于制备高压器件和敏感器件的集成电路,对于上述应用,要求Si膜中无缺陷。因此,采用热沉和厚度调制结构(图1),使缺陷限定于预先确定的区域,而在其余的区域得到无缺陷的SOI材料。当快速再结晶工艺选择不当时,在Si膜的各处都可能出现缺陷,我们使用横断面制样技术观察了石墨棒快速区熔无籽晶生长的再结晶硅膜中的缺陷(图2)。观察到的几种缺陷是亚晶界、位错和微孪晶·偶尔也观察到大角晶界。Si膜中最常见的缺陷是亚晶 A monocrystalline Si substrate is deposited with a layer of amorphous insulating SiO 2 film, and then a polycrystalline silicon layer is deposited on the SiO 2 film. After the zone melting recrystallization process, a single crystal silicon film is formed. This structured material is called SOI (Silicon on Insulator) SOI materials have many advantages when used in integrated circuits, high speed, high integration, anti-radiation and anti-Latch-up effect can also be used to prepare high-voltage devices And integrated circuits for sensitive devices, requiring no defects in the Si film for these applications. Therefore, using a heat sink and a thickness modulation structure (FIG. 1), the defect is confined to a predetermined area while the remaining area is provided with a defect-free SOI material. When the rapid recrystallization process was improperly selected, defects were likely to occur throughout the Si film. We observed the defects in the recrystallized silicon film grown in the rapid area of ​​the graphite rod using a cross-sectional sample preparation technique (Figure 2) . Several of the observed defects are subgrain boundaries, dislocations and micro-twins. Occasionally large-angle grain boundaries are also observed. The most common defect in Si films is subgrain