论文部分内容阅读
利用同位素跳跃技术和闪脱技术测得了CO和H_2在多晶Ni箔上的净吸附和净脱附速度。发现在Ni箔上吸附CO时,存在吸附促进吸附现象。但当吸附H_2时,则不发生此现象。表面上吸附的CO(a)的脱附被气相H_2(g)稍微加速(V_-~(co)(N_(co),P_(H_2))>0),H_2的吸附减少了CO(a)吸附量。气相中CO(g)也促进了表面上H(a)的脱附(V~H-(N_H,P_(co))>0),但表面上的CO(a)并不促进H(a)的脱附(V_H-(N_H,N_(co)≈0),这可能由于吸附时CO(g)和H(a)发生了相互作用。
The net adsorption and net desorption rates of CO and H_2 on polycrystalline Ni foil were measured by isotope jump technique and flashover technique. It was found that when adsorption of CO on Ni foil, adsorption promoted the adsorption phenomenon. However, this phenomenon does not occur when H 2 is adsorbed. The desorption of CO (a) adsorbed on the surface was slightly accelerated by gas phase H 2 (g) (V_ (co) (P_ (H_2))> 0) Adsorption capacity. The CO (g) in the gas phase also promoted the desorption of H (a) on the surface (V_H- (N_H, P_ (co))> 0) (V_H- (N_H, N_ (co) ≈0), which may be due to the adsorption of CO (g) and H (a) have an interaction.