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Si(Li)半导体探测器对低能X射线具有能量分辨率好、探测效率高、输出脉冲正比于入射光子能量等特点,故已日益引起人们的兴趣。为使Si(Li)探测器有更高的能量分辨率,制造者正努力研究工作在低温的探测器和前置放大器。一般的Si探测器都有一个耗尽层范围,这个耗尽层是对射线灵敏的部分,它的厚度ω可表示为ω=0.3(ρν)~(1/2),这里ρ是使用的P型材料的电阻率,ν,是加到探测器上的反向偏压,由前式可知,用10000Ω/cm的材料,加200V偏压,也只能得到0.4mm厚的耗尽层,这种厚度对测量X射线显然是太薄了,即使是
The Si (Li) semiconductor detector has been attracting increasing interest for low-energy X-rays due to its energy resolution, high detection efficiency, and its output pulse being proportional to the incident photon energy. To make Si (Li) detectors have higher energy resolution, manufacturers are working hard on detectors and preamplifiers working at low temperatures. A typical Si detector has a depletion range. The depletion layer is a ray-sensitive part whose thickness ω can be expressed as ω = 0.3 (ρν) ~ (1/2) where ρ is the value of P The resistivity of the material, ν, is the reverse bias applied to the detector. From the foregoing equation, it can be seen that with a material of 10000 Ω / cm and a bias of 200 V, only a 0.4 mm-thick depletion layer is obtained, which The thickness of the X-ray measurement is clearly too thin, even if it is