本文报道了CVD法制备ZnS晶体的制备工艺,系统地研究了气体流量、工作气压、基板温度等主要工艺参数对沉积速率的影响规律。实验表明,随着H2S(s)/Zn摩尔流量比的增加,沉积速率逐渐增大;基板温度升高,沉积速率加快;工作气压增大,沉积速率变化不大。在本实验研究的条件下认为,采用合适的H2S(s)/Zn摩尔流量比和沉积温度,在较低的工作气压下生长晶体,能保证较稳定的沉积速率,生长出高质量的晶体。 In this paper, the preparation process of ZnS crystals prepared by CVD method is reported. The influence of the main process parameters such as gas flow rate, working pressure and substrate temperature on the deposition rate is systematically studied. The experimental results show that the deposition rate increases with the increase of molar flow ratio of H2S (s) / Zn, and the substrate temperature increases and the deposition rate increases. The working pressure increases and the deposition rate does not change much. Under the condition of this experimental study, it is considered that the growth of crystals at a lower working pressure with a suitable H2S (s) / Zn molar flow ratio and deposition temperature can ensure a relatively stable deposition rate and grow high quality crystals.