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本文介绍了一种计算基区平均杂质浓度N_b的简单方法。并在前文所导出的公式的基础上,给出了基区扩散最大许可结深的计算方法,以及晶体管特征频率同收集结结深、基区平均杂质浓度之间的关系式。
This article presents a simple way to calculate the average concentration of base regions N_b. Based on the formulas derived in the previous section, the calculation method for the maximum allowable junction depth of base diffusion and the relationship between the characteristic frequency of the transistor and the collector junction depth and the average impurity concentration in the base region are given.