量子信息技术的发展对单光子探测器提出了更高的性能要求,新型的量子点单光子探测器具有很好的性能和发展潜力。研究了一种基于量子点场效应晶体管(QDFET)的单光子探测器,介绍了QDFET的光电导增益原理,对QDFET进行了材料选择和结构设计,并重点对QDFET的量子化光电导和增益的噪声平衡进行了实验分析,结果表明QDFET单光子探测在灵敏度、光子响应、光子分辨等方面具备很好的特性。 The development of quantum information technology puts forward higher performance requirements for single photon detectors. The new quantum dot single photon detectors have good performance and development potential. A single-photon detector based on quantum dot field effect transistor (QDFET) is introduced. The photoconductive gain principle of QDFET is introduced. Material selection and structure design of the QDFET are introduced. The QDFET quantum photoconductivity and gain The experimental results show that QDFET single-photon detection has good characteristics in terms of sensitivity, photon response and photon resolution.