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采用集成器件结构和先进工艺研制了一款等效低压二极管。该等效低压二极管的等效电路实质是一个普通npn三极管和一个普通二极管并联。这种结构的器件的正向特性是普通二极管的正向压降;反向特性是普通npn三极管的发射极E和集电极C之间的特性。选择特有的版图设计和工艺流程,可以将普通npn三极管的发射极E和集电极C之间的电压VECO(实际也是等效低压二极管的反向击穿电压)调整到5.1 V以下,该等效低压二极管的反向漏电可达到纳安级,反向动态电阻可达到10Ω以内。利用此特性,该等效低压二极管适合于高频千兆网口接口的保护,可以避免传输信号丢失。
Using integrated device structure and advanced technology developed an equivalent low voltage diode. The equivalent low-voltage diode equivalent circuit is essentially a normal npn transistor and a common diode in parallel. The forward characteristic of the device of this structure is the forward voltage drop of an ordinary diode; the reverse characteristic is the characteristic between the emitter E and the collector C of a conventional npn transistor. Select a unique layout design and process flow can be normal npn transistor between the emitter E and collector C voltage VECO (actually equivalent low-voltage diode reverse breakdown voltage) adjusted to 5.1 V or less, the equivalent Reverse leakage of low voltage diodes can reach the nano-level, the reverse dynamic resistance can reach 10Ω. With this feature, the equivalent low-voltage diode is suitable for the protection of the high-frequency gigabit network interface, which can avoid the loss of the transmission signal.