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NanjingElectronicDevicesInstitutehasfabricatedaGaAswide-bandmonolithicpoweramplifierwith0.5μmgate-lengthusingionimplantationprocess,andlargecapacitanceemployinghighdielectricconstantmaterial.Obtainedspecificationsarelistedasfollows:Frenquency/GHz 2～6
Nanjing Electronic Devices Institute of Fabrication of GaAs wide-band monolithic micropowramplifier with 0.5 μm gate-length using implant surgery, and large capacitance implanted high discharge electrical material stabilization. Faradons / GHz 2 to 6