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Carbon-doped InGaAsBi films on InP∶Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped InGaAsBi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid ther-mal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the InGaAsBi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×1021 cm-3 and achieved an ultra-low specific contact resistance of 1×10-8 Ω?cm2,revealing that contact resistance depends greatly on the tunneling effect.