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耗尽基区双极晶体管也称为双极静电感应晶体管（ＢＳＩＴ），其电流放大系数（ｈＦＥ）具有负的温度系数．双极结型晶体管（ＢＪＴ）的ｈＦＥ具有正的温度系数．将ＢＳＩＴ与ＢＪＴ并联，采用ＢＪＴ常规平面工艺制造了宽温高频高反压沟道基区双极ＰＮＰ晶体管．本文描述了这种新器件结构、工作原理、设计与制造．新器件突出特点是：当温度变化较大时，ｈＦＥ漂移较小．测试结果表明：环境温度从２５℃升到１８０℃时，器件的ｈＦＥ随温度Ｔ的变化率小于３５％．优于同类型的常规双极结型晶体管，平均改善２０％．当温度从２５℃降到－５５℃，器件的ｈＦＥ变化率小于或等于３０％．
Depleted base bipolar transistors, also known as bipolar electrostatic induction transistors (BSITs), have a negative temperature coefficient of current amplification factor (hFE). The hFE of a bipolar junction transistor (BJT) has a positive temperature coefficient. The BSIT and BJT parallel, the use of BJT conventional planar technology to create wide temperature and high voltage high reverse voltage base bipolar PNP transistor. This article describes the structure of this new device, working principle, design and manufacture. Prominent feature of the new device is: when the temperature changes, hFE drift smaller. The test results show that when the ambient temperature rises from 25 ℃ to 180 ℃, the change rate of hFE with temperature T is less than 35%. Better than the same type of conventional bipolar junction transistor, an average of 20% improvement. When the temperature drops from 25 ° C to -55 ° C, the hFE change rate of the device is less than or equal to 30%.