论文部分内容阅读
我们用测量在高温区电阻率随温度变化及差热分析(DTA)方法,研究了非晶簿带Co_(78-x)Fe_xSi_8B_(14)(x=5、10、20、30、40原子百分比)的晶化动力学。从300K到1000K非晶合金的电阻率(ρ)随温度(T)的变化曲线,在形式上是相似的,晶化前都有dρ/dT>0,在晶化期间电阻率的突变量Δρ也相近。晶化温度T_c,在750K到830K之间,而Δρ在29到34μΩ—cm之间。实验还表明,晶化后这些合金的矯顽力有相当大的增加,高到100—200奥斯特。DTA曲线,在720—830K之间有两个明显的放热峯。它所显示出的两个明显的阶段表明晶化时有两种晶相析出。在晶化温度附近,我们还测量了Co_(58)Fe_(20)Si_8B_(14)非晶簿带的电阻率随时间的等温变化。并根据退火曲线和Arrhenius关系,估算了其激活能为80千卡/摩尔。
We measured the resistivity of the amorphous band Co_ (78-x) Fe_xSi_8B_ (14) (x = 5, 10, 20, 30 and 40 atomic%) by measuring the change of the resistivity with temperature and the differential thermal analysis (DTA) ) Crystallization kinetics. The resistivity (ρ) of amorphous alloys from 300K to 1000K is similar in form to the change of temperature (T), with dρ / dT> 0 before crystallization and the abrupt change in electrical resistance Δρ during crystallization Similar. Crystallization temperature T_c is between 750K and 830K and Δρ is between 29 and 34μΩ-cm. Experiments also show that there is a considerable increase in the coercivity of these alloys after crystallization, up to 100-200 Oe. DTA curve, there are two obvious exothermic peaks between 720-830K. The two obvious phases it shows indicate the precipitation of two crystalline phases during crystallization. In the vicinity of the crystallization temperature, we also measured the isothermal change of the resistivity of Co_ (58) Fe_ (20) Si_8B_ (14) amorphous zone with time. According to the relationship between annealing curve and Arrhenius, the activation energy was estimated to be 80 kcal / mol.