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文章针对空间用功率MOSFET器件2N7266进行了60Co源γ射线辐射试验研究。在辐射过程中,采用JT-1型晶体管特性图示仪和计算机控制的摄像机实时监测器件电参数随辐射剂量变化的特征,通过试验研究获得了被试器件阈值电压、漏电流和击穿电压随总剂量变化的特征,得出了被试器件抗总剂量辐射的指标。研究结果可为被试器件在航天器型号的使用提供技术参考依据。
In this paper, a 60Co γ-ray irradiation experiment on space-powered power MOSFET device 2N7266 has been carried out. In the process of radiation, the characteristics of the electrical parameters of the real-time monitoring device of the JT-1 transistor and the computer-controlled video camera were studied. The threshold voltage, leakage current and breakdown voltage The total dose of the characteristics of changes in the device was tested against the total dose of radiation targets. The results of this study can provide a technical reference for the tested devices to be used in spacecraft models.