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提出了一种新型基于阳极氧化铝基板的板载芯片(Chip on Board)封装技术。在5 wt.%,30℃的草酸电解液中采用60 V直流电压,制备了0.1 mm厚度的阳极氧化铝基板圆片,铝导线最小线宽、电阻及导线间绝缘电阻分别为35μm、小于1Ω/cm与大于1×1010Ω。在超薄阳极氧化铝基板圆片进行了双层Flash裸芯片堆叠及金丝引线键合,实现了圆片级COB封装,成品率高于93%。最后,将COB单元进行三维堆叠封装,制备了32 Gb Flash模组。因此基于阳极氧化铝基板的板载芯片封装技术具有较大的应用前景。
A new type of chip on board packaging technology based on anodized aluminum substrate is proposed. Anodized aluminum substrate wafers with a thickness of 0.1 mm were prepared by using 60 V DC voltage in 5 wt.% And 30 ℃ oxalic acid electrolytes. The minimum wire width of the aluminum wire, the resistance and the insulation resistance between the wires were respectively 35μm and less than 1Ω / cm and greater than 1 × 1010Ω. The ultra-thin anodized aluminum substrate wafers were double-layer Flash bare chip stack and gold wire bonding to achieve the wafer-level COB package, the yield was higher than 93%. Finally, COB units were packaged in three dimensions and 32 Gb Flash modules were fabricated. Therefore, based on the anodized aluminum substrate on-chip packaging technology has a larger application prospect.