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Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy.Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction.High-pressure H2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film,which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si-Si bonds.