一、GaN纳米线的研究背景科技日新月异的今天,半导体技术、纳米技术在电子技术中起到了越来越大的作用。GaN的研究起步于60年代末~70年代初,是由美国的H.P.Marvska及Pankove等人采用卤化物晶体生长法生长的。GaN属宽禁带半导体材料,它具有对发光器件至关重要的直接带隙结构。优异的电学性质是其成为良好的宽带隙半导体材料的重要因素。GaN在制作 First, the research background of GaN nanowires With the ever-changing technology today, semiconductor technology, nanotechnology in electronic technology has played an increasingly important role. GaN research started in the late 1960s ~ early 1970s, by the United States H.P.Marvska and Pankove, who grew by halide crystal growth method. GaN is a wide bandgap semiconductor material that has a direct bandgap structure that is crucial for light-emitting devices. Excellent electrical properties make it an important factor for good wide bandgap semiconductor materials. GaN is making