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以水热合成Zn_(0.9)Cr_(0.1)O为例,探讨其反应机理。采用分析纯的ZnCl_2和CrCl_3为原料,以3 mol/L NaOH作为矿化剂,在260℃下,进行水热合成反应Zn_(0.9)Cr_(0.1)O稀磁半导体晶体。XRD表明所制备的Zn_(0.9)Cr_(0.1)O稀磁半导体晶体发育比较好,通过UV/vis测试可以观察到Cr离子的吸收峰,说明实现了掺杂。EDS分析确定了Cr~(3+)的含量。从固溶体离子半径比、结构、离子价位和电负性分析,过渡元素Cr~(3+)在基质晶体Zn O中的固溶度是有限的,增加Cr~(3+)的含量会导致杂质相的出现,不利于形成纯净的Zn_(1-x)Cr_xO。不等价置换固溶体会产生组分缺陷,形成空位或电子空穴,在材料的电性能方面有重要意义。
Taking hydrothermal synthesis of Zn_ (0.9) Cr_ (0.1) O as an example, the reaction mechanism was discussed. The Zn_ (0.9) Cr_ (0.1) O dilute magnetic semiconductor crystals were hydrothermally synthesized at temperatures of 260 ℃ using 3 mol / L NaOH as mineralizer with the analytically pure ZnCl_2 and CrCl_3 as raw materials. The results of XRD show that the crystal of Zn_ (0.9) Cr_ (0.1) O diluted magnetic semiconductor is better developed. The absorption peak of Cr ion can be observed by UV / vis test. EDS analysis determined the Cr 3+ content. The solid solubility of transition element Cr 3+ in matrix crystal Zn O is limited from the ratio of solid solution ion radius, structure, ionic valence and electronegativity. Increasing the content of Cr 3+ will lead to impurities The appearance of phase is not conducive to the formation of pure Zn_ (1-x) Cr_xO. Equivalent replacement of solid solution will produce component defects, the formation of vacancies or holes in the electrical properties of the material is of great significance.