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采用直流磁控溅射方法制备了钼/铜叠层结构电极,其电阻率达到2.28μΩ·cm,显著低于铝钕合金的电阻率;金属钼作为缓冲层,提高了铜电极在玻璃上的附着力;钼作为阻挡层有效地阻挡了铜向非晶硅中的扩散,避免了铜对于薄膜晶体管有源层的影响。采用这种结构的电极作为大尺寸高分辨平板显示器的扫描线和数据线有望缓解信号延迟的问题。
The DC magnetron sputtering method was used to fabricate a molybdenum / copper laminated electrode with a resistivity of 2.28μΩ · cm, which is significantly lower than that of the Al-Nd alloy. The metallic molybdenum acts as a buffer to improve the copper electrode on the glass Adhesion; Mo as a barrier layer effectively blocking the copper diffusion to amorphous silicon, to avoid the impact of copper on the active layer of the thin film transistor. Using this structure of the electrode as a large-size high-resolution flat panel display scan lines and data lines is expected to alleviate the problem of signal delay.