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在77K 下用氮分子激光器的337.1nm 谱线激发常压 MOCVD 法生长的 ZnTe 外延膜得到了与自由激子有关的发射。在不同衬底 CaF_2、BaF_2及 GaAs 上其同一机理发光的峰值位置不同,被归结为弹性应力及热力的影响。
The free exciton-related emission was obtained for the ZnTe epitaxial film grown by atmospheric pressure MOCVD at 337 K with the 337.1 nm line of a nitrogen molecular laser at 77K. The different luminescence peak positions of CaF_2, BaF_2 and GaAs on different substrates are attributed to elastic and thermal forces.