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The incorporation and the behavior of impurity Cd in the VPE of GaAs are studied by usingelemental Cd as a dopant in Ga-AsCl_3-H_2 system.The distribation coefficient of Cd and itssolubility in GaAs are found to be 0.01—0.001 and 4×10~(18)cm~(-3) respectively.The relationshipbetween the electrical properties and epitaxial parameters is discussed.As a result,the epilayerswith p-n or p~+-p-n junction were prepared using elemental S and Cd doping techniques.Thematerials obtained in this way have a smooth surface morphology and a good interfacial properties.
The incorporation and the behavior of impurity Cd in the VPE of GaAs are studied by usingelemental Cd as a dopant in Ga-AsCl_3-H_2 system. The distribation coefficient of Cd and itssolubility in GaAs are found to be 0.01-0.001 and 4 × 10 ~ (18) cm ~ (-3) respectively.The relationshipbetween the electrical properties and epitaxial parameters is discussed. As a result, the epilayers with pn or p ~ + -pn junction were prepared using elemental S and Cd doping techniques. The materials were obtained in this way have a smooth surface morphology and a good interfacial properties.