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本文报道了采用特殊的器件和工艺设计研制的聚合物半导体(PAn)表面场效应晶体管。其中,PAn膜为半导体层;两个相距20微米的金电极作源、漏;硅片为栅;热氧化二氧化硅膜做绝缘层。本文对PAn表面场效应晶体管的特性进行了测试和分析。
This article reports the development of polymer semiconductor (PAn) surface field-effect transistors using a special device and process design. Among them, the PAn film is a semiconductor layer; two gold electrodes 20 microns apart are used as the source and drain; the gate of the silicon wafer is a gate; and the thermal oxidized silicon dioxide film is used as the insulating layer. In this paper, the characteristics of PAn surface field effect transistor are tested and analyzed.