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Ⅱ-Ⅵ族材料具有少子寿命对位错不敏感、禁带宽度范围大及成本低等优点,分子束外延(MBE)生长的Si基Ⅱ-Ⅵ族材料可以作为新的材料体系应用于多结太阳电池中,并且开发新型Si基Ⅱ-Ⅵ族多结电池的效率有可能高于目前的Ⅲ-Ⅴ族多结电池。综述了MBE生长的Si基高质量CdTe和CdZnTe单晶薄膜以及对其进行n型和p型掺杂实验的研究进展。着重介绍了美国EPIR公司对以p-Si为衬底的CdZnTe单结电池和CdZnTe/Si双结电池原型器件的研究成果,其光伏转换效率分别达到了16%和17%,分析了研制高效率Si基Ⅱ-Ⅵ族多结电池面临的技术问题和提高电池效率的可能途径。
Ⅱ-Ⅵ group materials have the advantages of less insensitivity to dislocation, wide range of forbidden band width and low cost. Si-based II-VI materials grown by molecular beam epitaxy (MBE) can be used as a new material system for multi-junction Solar cells, and the development of new Si-based Ⅱ-Ⅵ multi-junction cell efficiency may be higher than the current III-V multi-junction cells. In this paper, the advances of MBE-grown high quality CdTe and CdZnTe single crystal thin films and their n-type and p-type doping experiments are reviewed. Emphasis is put on the research results of EPIR company on p-Si based CdZnTe single junction cell and CdZnTe / Si double junction cell prototype device. The photovoltaic conversion efficiencies reach 16% and 17% respectively. The high efficiency Si-based Ⅱ-Ⅵ family of multi-junction battery technology problems and possible ways to improve battery efficiency.