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基于InGaAs/InP吸收区、渐变区、电荷区和倍增区分离雪崩光电二极管(SAGCM APD)器件结构,利用数值计算方法,模拟了各层参数对器件频率响应特性的影响。模拟结果表明,吸收层、倍增层厚度及电荷层面电荷密度可影响器件的-3dB带宽;随增益的增加,器件带宽会逐渐降低;电荷层面电荷密度对器件击穿电压有明显影响。结合此模拟结果,制作出了高速InGaAs/InP雪崩光电二极管,并对器件进行了封装测试。测试结果表明,该结果与模拟结果相吻合。器件击穿电压为30V;在倍增因子为1时,器件响应度大于0.8A/W;在倍增因子为9时,器件暗电流小于10nA,-3dB带宽大于10GHz,其性能满足10Gbit/s光纤通信应用要求。
The device structure of avalanche photodiode (SAGCM APD) is separated based on the InGaAs / InP absorption, gradient, charge and multiplication regions. The influence of the parameters of each layer on the frequency response of the device is simulated by numerical method. The simulation results show that the absorption layer, the thickness of the doubler layer and the charge density of the charge layer can affect the -3dB bandwidth of the device. With the increase of the gain, the bandwidth of the device gradually decreases. The charge density of the charge layer has a significant effect on the breakdown voltage of the device. Combined with the simulation results, a high-speed InGaAs / InP avalanche photodiode was fabricated, and the package was tested. The test results show that the results are consistent with the simulation results. The device breakdown voltage is 30V. When the multiplication factor is 1, the responsivity of the device is greater than 0.8A / W. When the multiplication factor is 9, the device dark current is less than 10nA and the -3dB bandwidth is greater than 10GHz. The performance of the device satisfies 10Gbit / s optical fiber communication Application requirements.