The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are inves-tigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem-perature above room temperature in ali the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sin. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205,Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.