The isothermal oxidizing kinetics of Co-40Cr alloy and its yttrium ion-implanted samples were studied at 1000 ℃ in air by thermal-gravity analysis (TGA). Scanning electronic microscopy (SEM) was used to examine the Cr2O3 oxide film's morphology after oxidation. Secondary ion mass spectrum (SIMS) method was used to examine the binding energy change of chromium caused by Y-doping and its influence on formation of Cr2O3 film. Acoustic emission (AE) method was used in situ to monitor the cracking and spalling of oxide films formed on both samples during oxidizing and subsequent air-cooling stages. Theoretical model simulating the film fracture process was proposed to analyze the acoustic emission spectrum both on time domain and on AE-event number domain. It is found that yttrium ion-implantation can remarkably reduce the isothermal oxidizing rate of Co-40Cr and improve the anti-cracking and anti-spalling properties of Cr2O3 oxide film. Reasons for the improvement are mainly that the implanted yttrium can reduce the grain size of Cr2O3 oxide, increase the high temperature plasticity of oxide film, and remarkably reduce the number and size of Cr2O3/Co-40Cr interfacial defects. The isothermal oxidizing kinetics of Co-40Cr alloy and its yttrium ion-implanted samples were studied at 1000 ° C in air by thermal-gravity analysis (TGA). Scanning electronic microscopy (SEM) was used to examine the Cr2O3 oxide film's morphology after oxidation. Secondary ion mass spectrum (SIMS) method was used to examine the binding energy change of chromium caused by Y-doping and its influence on formation of Cr2O3 film. Acoustic emission (AE) method was used in situ to monitor the cracking and spalling of oxide films formed on both samples during oxidizing and subsequent air-cooling stages. Theoretical model simulating the film fracture process was proposed to analyze the acoustic emission spectrum both on time domain and on AE-event number domain. It is found that yttrium ion-implantation can remarkably reduce the isothermal oxidizing rate of co-40Cr and improve the anti-cracking and anti-spalling properties of Cr2O3 oxide film. Reasons for the improvement are mainly that the imp lanted yttrium can reduce the grain size of Cr2O3 oxide, increase the high temperature plasticity of oxide film, and remarkably reduce the number and size of Cr2O3 / Co-40Cr interfacial defects.