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选用非离子表面活性剂脂肪醇聚氧乙烯醚(AEO),通过自制的碱性铜抛光液,在E460E机台上研究不同体积分数活性剂对铜化学机械抛光(CMP)效果的影响。利用原子力显微镜(AFM)观察抛光后铜表面粗糙度,采用接触角测试仪测试不同的抛光液在铜表面的接触角。结果表明:铜抛光速率随着活性剂体积分数的增加呈缓慢降低趋势,加入活性剂可显著降低抛光后铜表面粗糙度。当加入体积分数3.0%的活性剂时,铜抛光速率从678.096 nm/min降低到625.638 nm/min,同时铜表面粗糙度从10.52 nm降低到1.784 nm,接触角从28.33°降低到12.25°。活性剂分子优先吸附在抛光后铜表面形成一层分子膜,表面粗糙度降低的根本原因是该分子膜增加了化学反应的活化能以及提高了抛光液的润湿性。基于Arrhenius方程,从活化能和温度两个参数阐述活性剂降低铜表面粗糙度的机制。
The nonionic surfactant fatty alcohol polyoxyethylene ether (AEO) was used to study the effects of different volume fractions of active agents on CMP by E460E using a homemade alkaline copper polishing solution. The surface roughness of polished copper was observed by atomic force microscope (AFM), and the contact angles of different polishing solutions on copper surface were measured by the contact angle tester. The results show that the copper polishing rate decreases slowly with the increase of the volume fraction of the active agent. Adding the active agent can significantly reduce the surface roughness of copper after polishing. The copper polishing rate decreased from 678.096 nm / min to 625.638 nm / min with the addition of 3.0% volume fraction of active agent, while the surface roughness decreased from 10.52 nm to 1.784 nm and the contact angle decreased from 28.33 ° to 12.25 °. Preferential adsorption of active agent molecules on the copper surface after polishing to form a molecular film, the fundamental reason for reducing the surface roughness is that the molecular film increases the activation energy of the chemical reaction and improves the wettability of the polishing solution. Based on the Arrhenius equation, the mechanism of the active agent reducing copper surface roughness is described from two parameters of activation energy and temperature.