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本文通过在有机发光二极管（OLED）的阳极与空穴传输层 NPB（N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺）之间加入 m-MTDATA(4,4’,4’’-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine)作为缓冲层来研究缓冲层对器件性能的影响。制备了 ITO/m-MTDATA(d nm)/NPB(40-d nm)/Alq3(70nm)/Li F(0.5nm)/Al(40nm)、ITO/ Mo O3 (15nm)/NPB(25 nm)/Alq3(70nm)/Li F(0.5nm)/Al(40nm)结构的器件，研究不同 m-MTDATA 厚度对 OLED 发光亮度、电流密度、电流效率等性能的影响。实验发现，当缓冲层的厚度为 15nm 时，器件的启亮电压从未加缓冲层的 13V降到了最低的 9V，最大发光亮度从未加缓冲层的 5900cd/m2增加到 16300cd/m2，是原来的 2.76 倍。最高的电流效率也由未加缓冲层的最高 1.8cd/A 变为最高的 3.5cd/A，是原来的 1.94 倍。然后在器件的 ITO 与 NPB 之间插入了Mo O3 缓冲层厚度为 15nm。与同厚度的 m-MTDATA 器件相比：插入 Mo O3 缓冲层器件的启亮电压降低为 8V，最大亮度为 13320(cd/m2)，最大电流密度为 6030.74(A/m2)，最大的电流效率为 3.06（cd/A)。
In this paper, the organic light-emitting diode (NPD) was fabricated by the combination of NPB (N, N’-diphenyl-N, N’- (1-naphthyl) -1,1’-biphenyl-4,4 The effect of buffer layer on the device performance was investigated by using m-MTDATA (4,4 ’, 4 "-Tris (N-3-methylphenyl-N-phenylamino) triphenylamine) as buffer layer. ITO / m-MTDATA (dnm) / NPB (40-dnm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm), ITO / MoO3 (15nm) / NPB / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) structure of the device to study the thickness of the m-MTDATA OLED brightness, current density, current efficiency and other performance. The experiment found that when the buffer layer thickness of 15nm, the device starting voltage dropped from 13V without buffer to the lowest 9V, the maximum brightness increased from 5900cd / m2 unbuffered to 16300cd / m2, is the original 2.76 times. The highest current efficiency from unbuffered 1.8cd / A into the highest 3.5cd / A, is 1.94 times the original. The Mo O3 buffer layer was then inserted between the ITO and NPB of the device to a thickness of 15 nm. Compared with the m-MTDATA device of the same thickness, the startup voltage of the Mo O3 buffer layer device is reduced to 8V, the maximum brightness is 13320 (cd / m2), the maximum current density is 6030.74 (A / m2), the maximum current efficiency Is 3.06 (cd / A).