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对不同条件下制备的锑化镓抛光晶片表面进行了TOF-SIMS测试比较。结果表明使用体积比为5∶1的HCl与CH_3COOH的混合溶液清洗腐蚀(100)GaSb晶片表面,可以有效地去除金属离子、含S离子和大部分有机物,而使用(NH_4)_2S/(NH_4)_2SO_4混合溶液方法钝化表面,可以使表面大部分Ga和Sb元素硫化,降低了表面态密度。分析比较了清洗和钝化工艺对晶片表面化学成分的影响。
TOF-SIMS testing of gallium antimonide polished wafers prepared under different conditions was performed. The results show that the metal ions, S ions and most organic compounds can be effectively removed by etching the surface of the (100) GaSb wafer with a mixed solution of HCl and CH_3COOH in a volume ratio of 5: 1, while the (NH_4) _2S / (NH_4) _2SO_4 mixed solution method of passivation of the surface, the surface can make most of the Ga and Sb sulfide, reducing the surface state density. The effects of cleaning and passivation process on the chemical composition of the wafer surface were analyzed and compared.