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研究了窄带隙材料InAs和三种不同掺杂浓度的InN在不同抽运光强激发下产生太赫兹(THz)波的辐射特性.实验结果表明:在相同的抽运光强下,InN和InAs辐射的THz信号强度在同一量级,InAs较InN辐射效率要高一些.随着抽运光强的增大,这几种材料的发射光谱变得更宽,当抽运光增大到一定强度时,它们的发射光谱半极大值全宽(HMFW)趋于恒定.InN比InAs更容易在较低功率的抽运光作用下获得宽带太赫兹光谱.研究也表明,不同掺杂浓度对辐射THz波的强度及辐射效率有很大影响.这项研究对于探索半导体表面辐射太赫兹波的机理具有一定的科学意义,同时也为寻找低成本和高效率的THz辐射源提供一定的参考.
The radiation characteristics of THz wave induced by different pumping light intensities are studied for the InAs with narrow band gap and InN with three different doping concentrations.The experimental results show that the InN and InAs The THz intensity of the radiation is of the same order of magnitude and InAs is more efficient than the InN radiation. As the pumping light intensity increases, the emission spectra of these materials become wider. When the pumping light increases to a certain intensity , The FWHM of their emission spectra tends to be constant. InN is more likely to acquire broadband THz spectra at lower power than InAs. The study also shows that the effects of different doping concentrations on radiation THz wave intensity and radiation efficiency have a great impact.This study for the semiconductor surface radiation terahertz wave mechanism has some scientific significance, but also to find a low-cost and efficient THz radiation source to provide some reference.