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双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注．但对其作用机制，特别是正栅压下的开启特性还需进一步深入研究．在实验观测的基础上，对ＢＳＩＴ开通过程进行了理论分析和二维数值模拟．结果表明，ＢＳＩＴ的完全开通须经过不同作用机制的两个阶段的转变，即由正向小栅压（ＶＧ≤０．５Ｖ）下的势垒控制机制转变为大栅压（ＶＧ≥０．５Ｖ）下的少子注入电流控制机制．数值计算给出的结果有：小栅压下沿沟道中心线的电势分布；沿沟道的少子和电场分布；开态的Ｉ－Ｖ特性；通态压降与饱和电流随正栅压的变化；通态电阻随栅压和材料参数的变化；特别是电流增益随栅压，漏电流以及材料参数的变化
Bipolar electrostatic induction transistor (BSIT) with its high current gain, low saturation voltage drop and high switching speed and other excellent performance by people’s attention. However, its mechanism of action, especially the opening characteristics under positive grid pressure, need to be further studied. Based on the experimental observations, the theoretical analysis and two-dimensional numerical simulation of BSIT opening process are carried out. The results show that the full opening of BSIT is subject to two stages of different mechanisms of action, that is, the barrier control mechanism under positive small gate voltage (VG≤0.5V) transforms to large gate voltage (VG≥0.5V ) Under the son injection current control mechanism. The results of numerical calculation are as follows: the potential distribution along the channel centerline of the gate with small gate voltage; the distribution of minority carriers and electric field along the channel; the I-V characteristic of on-state; the on-state voltage drop and saturation current Changes in on-state resistance with gate voltage and material parameters changes; especially the current gain with gate voltage, leakage current and material parameters changes