传统高速光电二极管是以带宽和响应率的折衷方案设计的。为获得一个大带宽器件。光产生的载流子越过高场耗尽区的过渡时间必须保持很小，限定了吸收层厚度的上限。对工作在几十千赫的大多数半导体器件来说，这一限制变得与吸收材料的吸收长度相匹敌，从而要求明显牺牲响应... Traditional high-speed photodiodes are designed with a compromise between bandwidth and responsivity. To get a big bandwidth device. The transition time of photo-generated carriers across the depletion region of the high field must be kept small, defining the upper limit of the thickness of the absorber layer. For most semiconductor devices operating at tens of kilohertz, this limit becomes comparable to the absorption length of the absorbing material, requiring a significant sacrifice of response ...