电子束曝光(Electron beam lithography,简称为EBL)是研制亚微米线宽VLSI的重要手段。入射电子束在胶和衬底中散射并沉积能量,获得能量的胶分子的分子量发生变化。然后依分子量大小作选择去除得到胶图案。胶中某点分子量变化的量值取决于该点上的沉积能密度。因此入射束的散射和能沉过程及沉积能的分布是影响曝光分辨率的关键因素。 Electron beam lithography (EBL) is an important method to develop sub-micron linewidth VLSI. The incident electron beam scatters and deposits energy in the glue and the substrate, and the molecular weight of the gel molecules that gain energy changes. Then according to the size of the molecular weight of choice to get the gum pattern. The amount of molecular weight change at a point in the gel depends on the deposited energy density at that point. Therefore, the incident beam scattering and sinking process and deposition energy distribution are the key factors affecting the resolution of exposure.