论文部分内容阅读
采用磁控溅射法制备了一系列的Mn掺杂的PtMn/Co多层膜 .通过测量得到的磁光常数和光学常数 ,计算介电张量的对角元和非对角元 ,得到在掺杂较大时 ,克尔角的变化是由于介电张量的非对角元引起的 ;在掺杂量较小时 ,克尔角的变化是由介电张量的对角元和非对角元以及光学常数的变化引起的 .
A series of Mn-doped PtMn / Co multilayer films were prepared by magnetron sputtering.The diagonal and diagonal elements of the dielectric tensor were calculated by measuring the magneto-optical constants and optical constants, When the doping amount is large, the change of Kerr angle is caused by the diagonal element of dielectric tensor. When the doping amount is small, the change of Kerr angle is caused by the diagonal element of dielectric tensor and non- Horns and changes in optical constants caused.