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Phase separations have been studied for graded-indium content In_xGa_(1-x)N/GaN multiple quantum wells(MQWs) with different indium contents by means of photoluminescence(PL),cathodeluminescence(CL) and time-resolved PL(TRPL) techniques.Besides the main emission peaks,all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K.CL images show a clear contrast for 3 samples,which indicates an increasing phase separation with increasing indium content.TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content,which means a carrier transferring from low indium content structures to high indium content structures.
Phase separations have been studied for graded-indium content In x Ga 1-x N / GaN multiple quantum wells (MQWs) with different indium contents by means of photoluminescence (PL), cathode luminescence (CL) and time-resolved PL .Besides the main emission peaks, all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K.CL images show a clear contrast for 3 samples, which indicates an increasing phase separation with increasing indium content. TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content, which means a carrier transferring from low indium content structures to high indium content structures.