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通过在AlxGa1-xAs/GaAs异质结表面制作一对分裂门,获得了用于实现声表面波单电子输运的准一维量子线.实验研究了0.3 K时电子沿该量子线的输运性质.通过自洽求解二维薛定谔方程和泊松方程,分析了该量子线的导带能量和电子浓度的分布,并讨论了量子线宽度对分裂门方向形成限制势的影响.特别是对其线性电子浓度随温度及分裂门电压的变化关系进行了数值模拟,所得到的钳断电压与实验测量值符合较好.
A quasi-one-dimensional quantum wire for single-electron SAW transport was obtained by fabricating a pair of split gates at the surface of AlxGa1-xAs / GaAs heterojunction.The transport of electrons along the quantum wire at 0.3 K Properties.According to the two-dimensional Schrödinger equation and the Poisson equation, the distribution of energy and electron concentration of the quantum wire is analyzed and the influence of the quantum wire width on the formation of the confinement potential in the direction of the split gate is discussed.In particular, The electron concentration was numerically simulated with the temperature and the relationship between the voltage and the gate voltage. The obtained clamp voltage was in good agreement with the experimental data.