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运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应 .模拟的内容包括具有不同的势垒高度的金属 -半导体接触在正向和反向偏置下的工作状态 .分析模拟结果可知 ,隧穿电流在反向偏置下起主要的作用 .同时还模拟了引入肖特基效应后 ,SBD的工作特性 ,验证了模拟使用的物理模型 .得到了与理论计算值符合的模拟结果 .分析模拟结果表明 ,由于肖特基效应形成的金属 -半导体接触势垒的降低 ,会在很大程度上影响金属 -半导体接触的输运特性
The self-consistent Monte Carlo method is used to simulate the tunneling effect of Schottky contacts.The simulation includes the working states of the metal-semiconductor contacts with different barrier heights in both forward and reverse biases.The analysis results It can be seen that the tunneling current plays a major role in the reverse bias and also simulates the operating characteristics of the SBD after the introduction of the Schottky effect and verifies the physical model used in the simulation.The simulation results in line with the theoretical calculations The simulation results show that the decrease of metal - semiconductor contact barrier caused by Schottky effect will largely affect the transport properties of metal - semiconductor contacts