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Rapid thermal annealing (RTA) of Si~+-implanted SI-GaAs was studied in an annealing system using a halogen lamp heater.Good electrical properties in activated layers were achieved. We found that the co-implantation of phosphorus (P~+) with Si~+ intoSI-GaAs can improve the mobility of ion implanted layer. Hall mobility of 4600～4700 cm~2/V. s and activation efficiencies of75～85% were obtained. These results are better than those obtained from the samples without P~+ co-implantation. Deep leveltransient spectroscopy (DLTS) measurements showed that the number of deep levels and their concentrations decreased. Wethink that the P atoms occupy the As vacancies and enhance the activation efficiency and the average Hall mobility. GaAsMESFETs with 0.5 W output power and associated gain of 3.5 dB at 6 GHz were obtained by this method.
Rapid thermal annealing (RTA) of Si ~ + -implanted SI-GaAs was studied in an annealing system using a halogen lamp heater. Good electrical properties in activated layers were achieved. We found that the co-implantation of phosphorus (P ~ +) Hall mobility of 4600-4700 cm ~ 2 / V. s and activation efficiencies of 75-85% were obtained. These results are better than those obtained from the samples without Deep level transmissometry spectroscopy (DLTS) measurements showed that the number of deep levels and their concentrations decreased. Wethink that the P atoms occupy the As vacancies and enhance the activation efficiency and the average Hall mobility. GaAsMESFETs with 0.5 W output power and associated gain of 3.5 dB at 6 GHz were obtained by this method.