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Si_3N_4薄膜已广泛用于半导体集成电路中。它是非常致密的绝缘层,能有效地阻挡钠离子渗透,用于器件的表面钝化和保护可以提高成品率和可靠性。作为钝化和保护的Si_3N_4工艺都在流程的后期进行.由于杂质扩散的原因,此时已不允许有较高的温
Si_3N_4 thin film has been widely used in semiconductor integrated circuits. It is a very dense insulating layer that effectively blocks the penetration of sodium ions for surface passivation and protection of the device to improve yield and reliability. Passivation and protection of Si_3N_4 process are carried out in the later stages of the process due to the proliferation of impurities, at this time has been allowed to have a higher temperature