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研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED).在室温下将刻蚀过的硅片浸入常规的HF-PdCl_2-HCl溶液制备了Pd膜.将沉积了Pd的基底作为工作电极,用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌.结果表明,Pd的生长遵循Volmer-Weber (VW)生长模式,Pd膜给出了很好的支持.
The Pd was hydrogenated on a hydrogen-terminated p-type single crystal silicon (100) surface. Pd films were prepared by immersing the etched silicon wafers in a conventional HF-PdCl 2 -HCl solution at room temperature The Pd substrate was deposited as a working electrode and the anodic dissolution behavior and morphology of the Pd film were investigated by cyclic voltammetry (CV), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results show that the growth of Pd Following the Volmer-Weber (VW) growth mode, Pd films are well supported.