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采用脉冲激光沉积(PLD)技术在LaSrAlTaO3(LSATO),LaAlO3(LAO)和SrTiO3(STO)的单晶倾斜衬底上成功制备了Pb(Zr0.3Ti0.7)O3(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长的情况下,激光感生电压随着单脉冲激光能量的增加线性增大;而在a取向择优生长的情况下感生电压与激光能量并无明显变化规律,说明PZT薄膜上的LIV效应是原子层热电堆效应,Seebeck系数的各向异性起着重要作用.通过实现薄膜与传输线的阻抗匹配,LITV信号的响应时间得到了很好的改善,上升沿时间由原来的60ns下降到了26ns,半高宽由260ns下降到了38ns.
The Pb (Zr0.3Ti0.7) O3 (PZT) thin films were successfully prepared on single crystal slant substrates of LaSrAlTaO3 (LSATO), LaAlO3 (LAO) and SrTiO3 (STO) by pulsed laser deposition (PLD) The LIV effect was first found in PZT films grown on inclined substrates.The LIV effect of PZT / LSATO films on the a and c axis under different orientation preferential growth was investigated and found that in the case of film c-axis preferred growth , The induced voltage of laser linearly increases with the increase of single-pulse laser energy, while there is no obvious change of induced voltage and laser energy in the case of a-direction preferential growth, indicating that the LIV effect on PZT thin film is atomic layer thermoelectric Heap effect, Seebeck coefficient anisotropy plays an important role.Through the realization of the film and the transmission line impedance matching, LITV signal response time has been very good improvement, the rising edge time from the original 60ns down to 26ns, half-width by 260ns dropped to 38ns.