【摘 要】
：
膜片式半导体压力传感器是一种以形变引起硅材料电阻率发生变化为原理而制成的器件,因此正确认识硅弹性形变膜片上的应力和应变分布情况是合理布局应变电阻条的前提。根据硅
【机 构】
：
华中理工大学固体电子学系,华中理工大学固体电子学系,华中理工大学固体电子学系
论文部分内容阅读
膜片式半导体压力传感器是一种以形变引起硅材料电阻率发生变化为原理而制成的器件,因此正确认识硅弹性形变膜片上的应力和应变分布情况是合理布局应变电阻条的前提。根据硅的晶体结构并利用各向异性腐蚀剂,可以较方便地获得周边固定的矩形和方形形变膜片。本文用计算机模拟出应变和应力在这些膜面上的变化规律。
Diaphragm type semiconductor pressure sensor is a kind of deformation caused by the change of resistivity of silicon material as the principle of the device made of the device, so a correct understanding of the silicon elastic deformation of the membrane stress and strain distribution is reasonable layout of the strain gauge resistance of the premise. According to the crystal structure of silicon and the use of anisotropic etchant, rectangular and square shaped fixed diaphragm can be easily obtained. In this paper, computer simulation of strain and stress in these membrane surface changes.
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