论文部分内容阅读
采用CBP和MCP做主体,分别掺杂磷光铱配合物Ir(piq)2(acac)和FIrpic作为红光发光层和蓝光发光层,研究了红光发光层和蓝光发光层的位置对器件性能的影响,得出结构为ITO/2T/NPB/MCP∶Firpic/CBP/CBP∶Ir(piq)2(acac)/Bphen/CdS/LiF/Al的器件性能较好。当CdS的厚度为0.1nm,电流密度为161mA/cm2时,器件的最大效率比不加CdS的器件的最大效率提高了1.42倍。亮度也有较大提高。在电流密度为225mA/cm2(电压为17.5V)时,最大亮度为20 890cd/m2,比不加CdS的器件的最大亮度16 610cd/m2高出4 280cd/m2。
The phosphorescent iridium complexes Ir (piq) 2 (acac) and FIrpic were doped as the red and blue light emitting layers respectively by using CBP and MCP as the host. The effects of the red light emitting layer and the blue light emitting layer on the device performance The results show that the device with ITO / 2T / NPB / MCP: Furpic / CBP / CBP: Ir (piq) 2 (acac) / Bphen / CdS / LiF / Al has good performance. When the thickness of CdS is 0.1nm and the current density is 161mA / cm2, the maximum efficiency of the device is 1.42 times higher than that of the device without CdS. Brightness has also greatly improved. At a current density of 225 mA / cm2 (at a voltage of 17.5 V), the maximum brightness is 20,890 cd / m2, which is 4 280 cd / m2 higher than the maximum brightness of 16 610 cd / m2 without the CdS device.