本文报导了光纤传输用 AlGaAs 双异质结(DH)激光器的缺陷和研究结果。找到并清除了在外延生长和激光器制作过程中引进的某些快速退化缺陷源。用光照射法和点状发光二极管在高结温、大注入电流下工作这两种方法对无缺陷的 DH 晶体和激光器进行了试验。高密度光照射引起不包括位错的暗点缺陷。无缺陷发光二极管在输出功率稍微减少之后就突然退化,注入区出现位错和小的错环。 This paper reports the defects and research results of AlGaAs double heterojunction (DH) lasers for optical fiber transmission. Find and eliminate some sources of rapid degradation defects introduced during epitaxial growth and laser fabrication. Two methods, light-irradiation and point-like LEDs operating at high junction temperature and large injection current, were tested on defect-free DH crystals and lasers. High density light exposure causes dark spot defects that do not include dislocations. Flawless LEDs suddenly degenerate after a slight reduction in output power, with dislocations and a small fault ring in the implanted region.