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结合栅组件是由金属—绝缘子—金属夹层组成,此组件是直接与浸渍钨阴极相接触。栅极组件的金属端面构成控制栅,而其底部的金属面则是阴极与绝缘体之间钡扩散的壁障。本设计的主要优点是所要求的栅——阴极间间距的严格公差极易达到,以及在阴极热态时能予以保持。本文所叙述的第一个结合栅结构是为栅一阴极间间距为2密耳的微波三极管所研制的,栅极网格尺寸为5×35密耳。栅极组件是由一个非常薄的各向异性的氮化硼绝缘体组成,在其两边是高频溅射金属化。这一制造工艺后来用来制造线性注管的收敛枪。
The bonding grid assembly consists of a metal-insulator-metal interlayer that is in direct contact with the impregnated tungsten cathode. The metal end face of the gate assembly forms the control gate and the metal face on the bottom of the gate assembly acts as a barrier to barium diffusion between the cathode and the insulator. The main advantage of this design is that the required tight tolerance of the grid-to-cathode spacing is extremely easy to reach and can be maintained when the cathode is hot. The first bond grid structure described herein was developed for a microwave transistor with a gate-to-cathode spacing of 2 mils and a gate grid size of 5 x 35 mils. The gate assembly consists of a very thin, anisotropic boron nitride insulator, high-frequency sputtered metallization on either side of it. This manufacturing process was later used to make the linear injection tube of the convergence gun.