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In this report,the interdiffusion between the p-InP with Au-Zn,Ti/Au,Pd/Au and Ti/Pd/Au atinterface have been investigated by Auger electron spectroscopy and electron spectroscopy for chemicalanalysis.The surface morphology for the heat treatment are observed with scanning electron microscopy.It is found that the indiffusion of Au is easier than that of Pd and Ti and the outdiffusion of In is easierthan that of P.The combination state of In and Au is formed during the heat treatment of p-InP/Au-Zn.The effects of the alloying temperature and time on the specific contacts resistance of p-InP/Au-Zn systemare studided.The low specific contact resistance,p_c=2.4-2.7×10~(-4)Ω-cm~2,is obtained when alloying at450℃ for 2 min or at 350℃ for 30 min.These results indicate that the specific contact resistance strongly depend on the“interdiffusiondegree”.The Zn in Au-Zn ahoy distributes onto the most surface layer of p-InP/Au-Zn system duringevaporation process and heat treatment.It may be one of the reasons for the higher specific contactsresistance.
In this report, the interdiffusion between the p-InP with Au-Zn, Ti / Au, Pd / Au and Ti / Pd / Au atinterface have been investigated by Auger electron spectroscopy and electron spectroscopy for chemicalanalysis. The surface morphology for the heat treatment are observed with scanning electron microscopy. It is found that the indiffusion of Au is easier than that of Pd and Ti and the outdiffusion of In is easierthan that of P. The combination state of In and Au is formed during the heat treatment of p- InP / Au-Zn. These effects of the alloying temperature and time on the specific contact resistance of p-InP / Au-Zn systemare stud. The low specific contact resistance, p_c = 2.4-2.7 × 10 -4 Ω- cm ~ 2, is obtained when alloying at450 ° C for 2 min or at 350 ° C for 30 min.These results indicate that the specific contact resistance strongly depend on the “interdiffusion de gree”. The Zn in Au-Zn ahoy distributes onto the most surface layer of p-InP / Au-Zn system duringevaporation process and heat treatment. It may b e one of the reasons for the higher specific contactsresistance.