Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of
The interfacial and electrical characteristics of Ge metal–oxide–semiconductor(MOS) devices with a dual passivation layer of ZrON/GeON formed by NH_3- or N_2-