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为了深入研究量子点半导体光放大器(QD-SOA)的特性,建立了量子点半导体光放大器子带导带的三能级系统模型。把系统载流子的速率方程与其他文献采用的速率方程进行了对比优化。通过数值计算得到了瞬态解,并得到载流子在放大器各能级态的浓度分布,验证了量子点中能级分立特性。利用电子和空穴各自的占有几率在基态成一定的线性关系,在稳态下对速率方程求解,得出了量子点半导体光放大器相关的增益特性,以及增益特性与基态电子的占有几率之间的关系。结果表明量子点半导体光放大器具有很高的饱和增益和微分增益,较低的阈值电流等特性。说明量子点半导体光放大器具有比其他体材料和量子阱光放大器更加优异的特性。为光放大器的设计提供了有力的理论指导。
In order to further study the characteristics of quantum dot semiconductor optical amplifier (QD-SOA), a three-level system model of quantum dot semiconductor optical amplifier sub-band conduction band is established. The rate equations of system charge carriers are compared with the rate equations of other literatures. The transient solution is obtained numerically and the concentration distribution of carriers at each energy level of the amplifier is obtained. The discrete nature of energy levels in quantum dots is verified. Using the linear relationship between the occupation probability of electrons and holes in the ground state, the rate equation is solved in the steady state, and the gain characteristics of the quantum-dot semiconductor optical amplifier and the gain probability of the ground state electrons are obtained. Relationship. The results show that the quantum dot semiconductor optical amplifier has high saturation gain and differential gain, lower threshold current and other characteristics. This shows that the quantum dot semiconductor optical amplifier has more excellent characteristics than other bulk materials and quantum well optical amplifiers. The optical amplifier design provides a powerful theoretical guidance.