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通常,为了在化学腐蚀GaAs时得到镜面,其溶解条件必须是在平行表面的方向上溶解速度快于垂直方向的溶解速度,同时能够从GaAs上除去反应产物。作为GaAs镜面腐蚀液而最广泛使用的H_2SO_4-H_2O_2溶液-H_2O混合液,面方向的溶解度随其混合比的改变而变化,并且反应的最缓阶段亦不同。在实际应用中,表面状态随温度、有无搅拌或超声振动等而变化,而混合比不同的腐蚀液的性质,即混合液中H_2O_2浓度的变化对腐蚀后的GaAs表面最有控制作用。在用下述方法进行腐蚀的情况下,对于GaAs(100)面,给出镜面的组份范围是窄的。
In general, in order to obtain a mirror when chemically etched by GaAs, the dissolution conditions must be such that the dissolution rate in the direction parallel to the surface is faster than the dissolution rate in the vertical direction, and the reaction product can be removed from the GaAs. As the most widely used H 2 SO 4 -H 2 O 2 solution-H 2 O as the etching solution of GaAs, the solubility in the plane direction changes with the mixing ratio, and the slowest reaction stage is also different. In practical applications, the surface state changes with temperature, with or without stirring or ultrasonic vibration. However, the nature of the etchant with different mixing ratios, that is, the change of the H 2 O 2 concentration in the mixture, has the most control over the surface of the etched GaAs. In the case of etching by the method described below, the range of the specular component is narrow for the GaAs (100) plane.