要求达到高线性的放大器电路常采用预失真法。而中国南京大学声学院现代声学国家重点实验室和美国加尼福尼亚大学的研究人员开发出一种预失真发生在器件级的新复合晶体管器件。这种新晶体管拓朴结构基于采用一个标准的异质结双极晶体管器件和另外一个倒装型异质结双极晶体管,其 Amplifier circuits that require high linearity are often predistorted. Researchers at the State Key Laboratory of Modern Acoustics and the University of California, Acorn, Nanjing, China, have developed a new compound transistor device with pre-distortion occurring at the device level. This new transistor topology is based on the use of a standard heterojunction bipolar transistor device and another flip-chip heterojunction bipolar transistor, which