The substrate temperature (Ts) and N2 partial pressure (PN2) dependent optical and electrical properties of sputteredInGaZnON thin films are studied. With the increased Ts and PN2, the thin film becomes more crystallized and nitrified. The Hall mobility, free carrier concentration (Ne), and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing. The photoluminescence (PL) intensity decreases with the increased Ne. The band gap (Eg) narrows and the linear refractive index (n1) increases with the increasing concentration of N in the thin films. The Stokes shift between the PL peak and absorption edge decreases with Eg. The n1, dispersion energy, average oscillator wavelength, and oscillator length strength all increase with n1. The single oscillator energy decreases with n1. The nonlinear refractive index and third order optical susceptibility increase with n1. The Seebeck coefficient, electron effective mass, mean free path, scattering time, and plasma energy are all Ne dependent.